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Monocrystalline silicon pressure transmitter
The 3051 monocrystalline silicon pressure transmitter is used to measure the liquid level, density, and pressure of liquids, gases, or vapors, and the
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3051 Monocrystalline Silicon Pressure TransmitterThe self-developed intelligent pressure transmitter with HART communication protocol is a new generation of high-performance intelligent differential pressure and pressure transmitter. It adopts the advanced international micro mechanical single crystal silicon sensor technology, utilizing the excellent stability and repeatability characteristics of single crystal silicon materials. Through micro mechanical processing technology and laser welding packaging technology, it has extremely high reliability and stability, and the impact of unidirectional overload on static pressure is minimal. The HART digital communication technology adds intelligence and digital communication functions, further meeting the requirements of high reliability, high stability, and intelligence for industrial field measurement team instruments.The sensor module adopts full welding technology and has an integrated overload diaphragm, a pressure sensor, and a temperature sensor inside. The temperature sensor serves as a reference value for temperature compensation. The positive pressure side of the pressure sensor is connected to the high-pressure chamber of the sensor capsule, and the negative pressure side of the sensor is connected to the low-pressure chamber of the sensor capsule. The pressure is transmitted to the silicon chip inside the sensor through the isolation diaphragm and filling liquid, causing a change in the resistance value of the pressure sensor chip and resulting in a change in the output voltage of the detection system. The output voltage is proportional to the pressure change, and then converted into a standardized signal output by the adaptation unit and amplifier.
The piezoresistive pressure sensor is constructed using the piezoresistive effect of single crystal silicon. Using a single crystal silicon wafer as the elastic element, a set of equivalent resistors are diffused in a specific direction on the single crystal silicon film using integrated circuit technology, and the resistors are connected into a bridge. The single crystal silicon wafer is placed inside the sensor cavity.
Monocrystalline silicon pressure transmitterWhen the pressure changes, the single crystal silicon undergoes strain, causing the strain resistance directly diffused on it to change proportionally to the measured pressure, and then the corresponding voltage output signal is obtained by the bridge circuit.
Measurement range: 0-1kPa-10MPa
Output signal: 4-20mA, 4-20mA+HART
Reference accuracy: ± 0.2% URL
Stability: ± 0.2% URL/year
Diaphragm: SS316L， Hastelloy C
Medium temperature:- 40~120℃
Protection level: IP67
Process connections: M20 * 1.5 (M), G1/2 (M), G1/4 (M), 1/2-14NPT (M), etc
Measurement medium: liquid, gas, vaporauthentication: CE、 EEx d
The piezoresistive pressure sensor is constructed using the piezoresistive effect of single crystal silicon. Using a single crystal silicon wafer as the elastic element, a set of equivalent resistors are diffused in a specific direction on the single crystal silicon film using integrated circuit technology, and the resistors are connected into a bridge. The single crystal silicon wafer is placed inside the sensor cavity.
Monocrystalline silicon pressure transmitterWhen the pressure changes, the single crystal silicon undergoes strain, causing the strain resistance directly diffused on it to change proportionally to the measured pressure, and then the corresponding voltage output signal is obtained by the bridge circuit.
Measurement range: 0-1kPa-10MPa
Output signal: 4-20mA, 4-20mA+HART
Reference accuracy: ± 0.2% URL
Stability: ± 0.2% URL/year
Diaphragm: SS316L， Hastelloy C
Medium temperature:- 40~120℃
Protection level: IP67
Process connections: M20 * 1.5 (M), G1/2 (M), G1/4 (M), 1/2-14NPT (M), etc
Measurement medium: liquid, gas, vaporauthentication: CE、 EEx d
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